| PART |
Description |
Maker |
| ICS83840AHT ICS83840AH ICS83840 ICS83840AHLFT ICS8 |
DDR SDRAM MUX
|
Integrated Circuit Syst...
ICST[Integrated Circuit Systems]
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM
256MB Unbuffered DDR SDRAM DIMM
1GB Unbuffered DDR SDRAM DIMM
512MB Registered DDR SDRAM DIMM
256MB DDR SDRAM SO DIMM
512MB Unbuffered DDR SDRAM DIMM
1GB DDR SDRAM SO DIMM
1GB Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http://
ELPIDA MEMORY INC
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M312L2828BT0 |
M312L2828BT0 DDR SDRAM 184pin DIMM 128Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
| NT512D72S4PA0GR-75B NT512D72S4PA0GR-7K NT512D72S4P |
256Mb: 64Mx72; unbuffered DDR SDRAM module based on 64Mx4 DDR SDRAM
|
NANYA
|
| NT256D72S4PA0GR-75B NT256D72S4PA0GR-7K NT256D72S4P |
256Mb: 32Mx72 DDR SDRAM module based on 32Mx4 DDR SDRAM
|
NANYA
|
| HYB25D128160CE-6 HYB25D128400CE-6 HYB25D128800CE-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
| 256MBDDRSDRAM K4H561638B K4H560838B K4H560438B |
256Mb DDR SDRAM
DDRSDRAMSpecificationVersion0.3
DDR SDRAM Specification Version 0.3
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
